RD70HVF1

MOS FET type transistor, High Efficiency, High power, High Gain, 30 V, 150 W, 20A, surface mount

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Price:: US $1.00~10.00 / piece [Get Latest Price]

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	US $1.00~10.00

PartNumber:: RD70HVF1

Brand:: Mitsubishi Electric Semiconductor - MES | Pack: DIP | D/C: 10+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2011-11-02

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Product Summary

The RD70HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers applications. It is suitable for For output stage of high power amplifiers in VHF/UHF Band mobile radio sets.

Parametrics

RD70HVF1 absolute maximum ratings: (1)VDSS, Drain to source voltage: 30 V; (2)VGSS, Gate to source voltage: ±20 V; (3)Pch, Channel dissipation: 150 W; (4)Pin, Input power: 10W; (5)ID, Drain current: 20 A; (6)Tch, Channel temperature: 175℃; (7)Tstg, Storage temperature: -40 to +175℃; (8)Rth j-c, Thermal resistance: 1.0℃/W.

Features

RD70HVF1 features: (1)High power and High Gain: Pout>70W, Gp>10.6dB @Vdd=12.5V,f=175MHz; Pout>50W, Gp>7.0dB @Vdd=12.5V,f=520MHz; (2)High Efficiency: 60%typ.on VHF Band; (3)High Efficiency: 55%typ.on UHF Band.