(China (Mainland))
Product Summary
The IRF7534D1TR belongs to the FETKY family of co-packaged MOSFETs and Schottky diodes, which offers the designer an innovative, board space saving solution for switching regulator and power management applications. And the IRF7534D1TR utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications, such as cell phones, PDAs, etc.
Parametrics
IRF7534D1TR absolute maximum ratings: (1)Drain-Source Voltage -20 V; (2)Continuous Drain Current: -4.3A; (3)Continuous Drain Current: -3.4 A; (4)Pulsed Drain Current: -34 A; (5)Maximum Power Dissipation: 1.25 W; (6)Maximum Power Dissipation: 0.8 W; (7)Linear Derating Factor: 10 mW/℃; (8)Gate-to-Source Voltage: ± 12 V; (9)Peak Diode Recovery dv/dt: 1.1 V/ns; (10)Junction and Storage Temperature Range:-55 to + 150 ℃.
Features
IRF7534D1TR features: (1)Co-packaged HEXFET power MOSFET and Schottky diode; (2)Ultra Low On-Resistance MOSFET; (3)Trench technology; (4)Micro8TM Footprint; (5)Available in Tape and Reel.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||
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 IRF7534D1TR |
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MOSFET P-CH 20V 4.3A MICRO8 |
Data Sheet |
Negotiable |
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IRF7534D1TRPBF |
International Rectifier |
MOSFET P-CH 20V 4.3A MICRO8 |
Data Sheet |
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