(China (Mainland))
Product Summary
The 2SC1945 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on HF band mobile radio applications.
Parametrics
2SC1945 absolute maximum ratings: (1)Collector to base voltage: 80V; (2)Emitter to base voltage: 5V; (3)Collector to emitter voltage: 40V; (4)Collector current: 6A; (5)Collector dissipation: Ta=25℃, 1.5W; Tc=25℃, 20W; (6)Junction tempearture: 150℃; (7)Storage temperature: -55 to 150℃; (8)Thermal resistance: junction to ambient, 83.3 ℃/W; junction to case, 6.25℃/W.
Features
2SC1945 features: (1)High power gain: Gpe≧14.5dB @ Vcc=12V, Po=14W, f=27MHz; (2)Emitter ballasted construction for high reliability and good performances; (3)TO-220 package similarly is combinient for mounting; (4)Ability of withstanding infinite load VSWR when operated at Vcc=16V, Po=18W, f=27MHz.
Diagrams
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 2SC1945 |
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Negotiable |
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