(China (Mainland))
Product Summary
The TLP521-4 is a photocoupler. The TLP521-4 is a photo transistor optically coupled to a gallium arsenide infrared emitting diode. The TLP521-4 offers two isolated channels in an eight lead platic DIP package, while the TLP521-4 provides four isolated channels in a sixteen plastic DIP package.
Parametrics
TLP521-4 absolute maximum ratings: (1)Forward current, IF: 50 mA; (2)Forward current derating, ΔIF /℃: -0.5 (Ta≥25℃) mA /℃; (3)Pulse forward current, IFP: 1A; (4)Reverse voltage, VR: 5V; (5)Junction temperature, Tj: 125℃; (6)Collector-emitter voltage, VCEO: 55 V; (7)Emitter-collector voltage, VECO: 7 V; (8)Collector current, IC: 50 mA; (9)Collector power dissipation (1 Circuit), PC: 100 mW; (10)Collector power dissipation derating(Ta≥25℃) (1 Circuit), ΔPC /℃: -1.0 mW /℃; (11)Junction temperature, Tj: 125℃; (12)Operating temperature range, Topr: -55~125℃; (13)Storage temperature range, Tstg: -55~100℃; (14)Lead soldering temperature, Tsol: 260 (10s)℃; (15)Total package power dissipation (1 Circuit), PT: 150 mW; (16)Total package power dissipation derating (Ta≥25℃) (1 Circuit), ΔPT /℃: -1.5 mW /℃; (17)Isolation voltage, BVS: 2500(AC,1min,R.H.≤60%) Vrms.
Features
TLP521-4 features: (1)Collector-Emitter Voltage: 55 V (MIN); (2)Current Transfer Ratio : 50% (MIN); Rank GB: 100% (MIN); (3)Isolation Voltage: 2500 Vrms (MIN); (4)UL Recognized: made in Japan: UL1577 , File No. E67349; made in Thailand: UL1577 , File No. E152349.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 TLP521-4 |
Other |
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Data Sheet |
Negotiable |
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TLP521-4GB |
Other |
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Data Sheet |
Negotiable |
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