(China (Mainland))
Product Summary
The RF2103P is a medium power linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final linear RF amplifier in UHF radio transmitters operating between 450MHz and 1000MHz. The RF2103P may also be used as a driver amplifier in higher power applications. The device is self-contained with the exception of the output matching network, power supply feed line, and bypass capacitors, and it produces an output power level of 750mW (CW). The RF2103P can be used in 3 cell battery applications.
Parametrics
RF2103P absolute maximum ratings: (1)Supply Voltage: -0.5 to +7.5 VDC; (2)Power Down Voltage (VPD): -0.5 to+5 V; (3)DC Supply Current: 350 mA; (4)Input RF Power: +12 dBm; (5)Output Load VSWR: 10:1; (6)Operating Case Temperature: -40 to +100℃; (7)Operating Ambient Temperature: -40 to +85℃; (8)Storage Temperature: -40 to +150℃.
Features
RF2103P features: (1)450MHz to 1000MHz Operation; (2)Up to 750mW CW Output Power; (3)31dB Small Signal Gain; (4)Single 2.7V to 7.5V Supply; (5)47% Efficiency; (6)Digitally Controlled Power Down Mode.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
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 RF2103PTR7 |
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IC LINEAR AMP MED-PWR 14-SOIC |
Data Sheet |
Negotiable |
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RF2103P |
Other |
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Data Sheet |
Negotiable |
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