(China (Mainland))
Product Summary
The MRF899 is an NPN silicon RF power transistor. Designed for 26 Volt UHF large–signal, common emitter, Class AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 800–960 MHz.
Parametrics
MRF899 absolute maximum ratings: (1)Collector–Emitter Voltage, VCEO: 28 Vdc; (2)Collector–Emitter Voltage, VCES: 60 Vdc; (3)Emitter–Base Voltage, VEBO: 4.0 Vdc; (4)Collector–Current - Continuous, IC: 25 Adc; (5)Total Device Dissipation, PD: 230W @ TC = 25℃; 1.33W/℃ when Derate above 25℃; (6)Storage Temperature Range, Tstg: –65 to +150℃.
Features
MRF899 features: (1)Specified 26 Volt, 900 MHz Characteristics: Output Power = 150 Watts (PEP); Minimum Gain = 8.0 dB @ 900 MHz, Class AB; Minimum Efficiency = 35% @ 900 MHz, 150 Watts (PEP); Maximum Intermodulation Distortion –28 dBc @ 150 Watts (PEP); (2)Characterized with Series Equivalent Large–Signal Parameters from 800 to 960 MHz; (3)Silicon Nitride Passivated; (4)100% Tested for Load Mismatch Stress at all Phase Angles with 5:1 VSWR @ 26 Vdc, and Rated Output Power; (5)Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration; (6)Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
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 MRF899 |
Freescale Semiconductor |
TRANS RF 150W 900MHZ NI-860C3 |
Data Sheet |
Negotiable |
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MRF899D |
Other |
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Data Sheet |
Negotiable |
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