Product Summary

The MRF6V2300NBR is a RF Power Field Effect Transistor. It is designed primarily for CW large-signal output and driver applications with frequencies up to 600 MHz. The MRF6V2300NBR unmatched and is suitable for use in industrial, medical and scientific applications.

Parametrics

MRF6V2300NBR absolute maximum ratings: (1)Drain-Source Voltage, VDSS: -0.5, +110 Vdc; (2)Gate-Source Voltage, VGS: -0.5, +10 Vdc; (3)Storage Temperature Range, Tstg: - 65 to +150℃; (4)Case Operating Temperature, TC: 150℃; (5)Operating Junction Temperature, TJ: 200℃.

Features

MRF6V2300NBR features: (1)Integrated ESD Protection; (2)Excellent Thermal Stability; (3)Facilitates Manual Gain Control, ALC and Modulation Techniques; (4)200℃ Capable Plastic Package; (5)RoHS Compliant; (6)In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

Diagrams

MRF6V2300NBR pin connection

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
MRF6V2300NBR1
MRF6V2300NBR1

Freescale Semiconductor

Transistors RF MOSFET Power VHV6 300W TO272WB4N

Data Sheet

0-386: $31.49
386-500: $31.49
MRF6V2300NBR5
MRF6V2300NBR5

Freescale Semiconductor

Transistors RF MOSFET Power VHV6 300W Latrl N-Ch SE Broadband MOSFET

Data Sheet

0-1: $39.82
1-25: $38.62
25-50: $35.51
50-100: $32.41