(China (Mainland))
Product Summary
The MRF182 is the N–Channel enhancement–mode lateral MOSFET, which uses Field Effect transistor.
Parametrics
MRF182 absolute maximum ratings: (1)Drain–Source Voltage: 65 Vdc; (2)Gate–Source Voltage: ±20 Vdc; (3)Total Device Dissipation @ TC = 70℃, 74 W; Derate above 70℃, 0.57W/°C; (4)Storage Temperature Range: – 65 to +150 ℃; (5)Operating Junction Temperature: 200℃.
Features
MRF182 features: (1)High Gain, Rugged Device; (2)Broadband Performance from HF to 1 GHz; (3)Bottom Side Source Eliminates DC Isolators, Reducing Common Mode Inductances.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
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 MRF182 |
Other |
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Data Sheet |
Negotiable |
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MRF182R1 |
Other |
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Data Sheet |
Negotiable |
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MRF182S |
Other |
|
Data Sheet |
Negotiable |
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MRF182SR1 |
Other |
|
Data Sheet |
Negotiable |
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