Product Summary

The MRF175GV is a RF MOSFET line RF power field-effect transistor. It is Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of the MRF175GV makes possible solid state transmitters for FM broadcast or TV channel frequency bands.

Parametrics

MRF175GV absolute maximum ratings: (1)Drain–Source Voltage, VDSS: 65 Vdc; (2)Drain–Gate Voltage (RGS = 1.0 MΩ),VDGR: 65 Vdc; (3)Gate–Source Voltage, VGS: ±40 Vdc; (4)Drain Current — Continuous ,ID: 26 Adc; (5)Total Device Dissipation, PD: 400W; (6)Storage Temperature Range, Tstg: –65 to +150℃; (7)Operating Junction Temperature, TJ: 200℃.

Features

MRF175GV features: (1)Guaranteed Performance: MRF175GV @ 28 V, 225 MHz (V Suffix): Output Power:200 Watts; Power Gain: 14 dB Typ; Efficiency: 65% Typ; MRF175GU @ 28 V, 400 MHz (U Suffix): Output Power: 150 Watts; Power Gain: 12 dB Typ; Efficiency: 55% Typ; (2)100% Ruggedness Tested At Rated Output Power; (3)Low Thermal Resistance; (4)Low Crss — 20 pF Typ @ VDS = 28 V.

Diagrams

MRF175GV circuit

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MRF175GV
MRF175GV

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MRF1.6/5.6
MRF1.6/5.6

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MRF1.6/5.6-AP-2.5C
MRF1.6/5.6-AP-2.5C

Hirose Connector

RF Connectors Obsolete

Data Sheet

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MRF1.6/5.6-AP-59U
MRF1.6/5.6-AP-59U

Hirose Connector

RF Connectors Obsolete

Data Sheet

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MRF1.6/5.6-BCUPA
MRF1.6/5.6-BCUPA

Hirose Connector

RF Connectors Obsolete

Data Sheet

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MRF1.6/5.6-LPJ-179U
MRF1.6/5.6-LPJ-179U

Hirose Connector

RF Connectors Obsolete

Data Sheet

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MRF1.6/5.6-LR-PC-1
MRF1.6/5.6-LR-PC-1

Hirose Connector

RF Connectors Obsolete

Data Sheet

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