Product Summary

The K2611 is a TOSHIBA field effect transistor. It is suitable for DC-DC Converter, Relay Drive and Motor Drive Applications.

Parametrics

K2611 absolute maximum ratings: (1)Drain-source voltage VDSS: 900 V ; (2)Drain-gate voltage (RGS = 20 kΩ) VDGR: 900 V ; (3)Gate-source voltage VGSS: ±30 V ; (4)Drain current DC ID: 9 A ; (5)Pulse IDP: 27 A ; (6)Drain power dissipation (Tc = 25℃) PD: 150 W ; (7)Single pulse avalanche energy EAS: 663 mJ ; (8)Avalanche current IAR: 9 A ; (9)Repetitive avalanche energy EAR: 15 mJ ; (10)Channel temperature Tch: 150 ℃; (11)Storage temperature range Tstg: -55 to 150 ℃.

Features

K2611 features: (1)Low drain-source ON resistance: RDS (ON) = 1.1 Ω (typ.); (2)High forward transfer admittance: |Yfs|= 7.0 S (typ.); (3)Low leakage current: IDSS = 100 μA (max) (VDS = 720 V); (4)Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA).

Diagrams

K2611 dimensions