(China (Mainland))
Product Summary
The 5N2307 is a Silicon N Channel MOS FET.
Parametrics
5N2307 absolute maximum ratings: (1)Drain to source voltage, VDSS: 230 V; (2)Gate to source voltage, VGSS: ±30 V; (3)Drain current, ID: 35 A; (4)Drain peak current, ID (pulse): 140 A; (5)Body-drain diode reverse drain current, IDR: 35 A; (6)Body-drain diode reverse drain peak current, IDR (pulse): 140 A; (7)Avalanche current, IAP: 18 A; (8)Channel dissipation, Pch: 60 W; (9)Channel to case thermal impedance, θch-c: 2.08℃/W; (10)Channel temperature, Tch: 150℃; (11)Storage temperature, Tstg: –55 to +150℃.
Features
5N2307 features: (1)Low on-resistance; (2)Low leakage current; (3)High speed switching.
Diagrams
