(China (Mainland))
Product Summary
The 2n5952 is a N-Channel RF Ampifier. This device is designed primarily for electronic switching applications such as low on resistance analog switching. The 2n5952 is sourced from process 50.
Parametrics
2n5952 absolute maximum ratings: (1)VDG Drain-Gate Voltage: 30 V; (2)VGS Gate-Source Voltage: -30 V; (3)IGF Forward Gate Current: 10 mA; (4)TJ, TSTG Operating and Storage Junction Temperature Range: -55 to +150℃.
Features
2n5952 features: (1)designed primarily for electronic switching applications such as low on resistance analog switching; (2)Sourced from process 50.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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 2N5952 |
Central Semiconductor |
Transistors RF JFET NPN RF Amp |
Data Sheet |
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2N5952_D74Z |
Fairchild Semiconductor |
Transistors RF JFET NCh RF Transistor |
Data Sheet |
Negotiable |
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2N5952_D75Z |
Fairchild Semiconductor |
Transistors RF JFET NCh RF Transistor |
Data Sheet |
Negotiable |
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2N5952_Q |
Fairchild Semiconductor |
Transistors RF JFET NCh RF Transistor |
Data Sheet |
Negotiable |
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2N5952_J35Z |
Fairchild Semiconductor |
Transistors RF JFET 30V N-CH JFET RDS ON |
Data Sheet |
Negotiable |
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