Product Summary
The 2n5087 is a PNP General Purpose Amplifier. This device is designed for low level, high gain, low noise general purpose amplifier applications at collector currents to 50mA.
Parametrics
2n5087 absolute maximum ratings: (1)VCEO, Collector-Emitter Voltage: -50 V; (2)VCBO, Collector-Base Voltage: -50 V; (3)VEBO, Emitter-Base Voltage: -3.0 V; (4)IC, Collector current - Continuous: -100 mA; (5)TJ, Tstg, Junction and Storage Temperature: -55 to +150℃.
Features
2n5087 features: (1)V(BR)CEO, Collector-Emitter Breakdown Voltage: -50 V when IC = -1.0mA, IB = 0; (2)V(BR)CBO, Collector-Base Breakdown Voltage: -50 V when IC = -100μA, IE = 0; (3)ICEO, Collector Cutoff Current: -10nA when VCB = -10V, IE = 0; -50nA when VCB = -35V, IE = 0; (4)ICBO, Emitter Cutoff Current: -50 nA when VEB = -3.0V, IC = 0.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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2N5087 |
Central Semiconductor |
Transistors Bipolar (BJT) PNP Gen Pur SS |
Data Sheet |
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2N5087_D26Z |
Fairchild Semiconductor |
Transistors Bipolar (BJT) |
Data Sheet |
Negotiable |
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2N5087_D75Z |
Fairchild Semiconductor |
Transistors Bipolar (BJT) |
Data Sheet |
Negotiable |
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2N5087_J18Z |
Fairchild Semiconductor |
Transistors Bipolar (BJT) PNP Transistor General Purpose |
Data Sheet |
Negotiable |
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2N5087_J18Z_Q |
Fairchild Semiconductor |
Transistors Bipolar (BJT) PNP Transistor General Purpose |
Data Sheet |
Negotiable |
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2N5087_J61Z |
Fairchild Semiconductor |
Transistors Bipolar (BJT) PNP Transistor General Purpose |
Data Sheet |
Negotiable |
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2N5087_S00Z |
Fairchild Semiconductor |
Transistors Bipolar (BJT) PNP Transistor General Purpose |
Data Sheet |
Negotiable |
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2N5087BU |
Fairchild Semiconductor |
Transistors Bipolar (BJT) PNP Transistor General Purpose |
Data Sheet |
Negotiable |
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