Product Summary

The 2SC2539 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in VHF band mobile radio applications.

Parametrics

2SC2539 absolute maximum ratings: (1)VCBO, collector to base votage: 35V; (2)VEBO, emitter to base voltage: 4V; (3)VCEO, collector to emitter votlage: 17V; (4)IC, collector current: 3.5A; (5)PC, collector dissipation: 175℃; (6)Tj, junction temperature: 175℃; (7)Tstg, storage temperature: -55 to 175℃.

Features

2SC2539 features: (1)high power gain; (2)emitter ballasted construction and gold metallization for high reliability and good performances; (3)low thermal resistance ceramic package with flange; (4)ability of withstanding more than 20:1 load VSWR when operated at VCC=15.2V, Po=18W, f=17MHz, Tc=25℃.

Diagrams

2SC2539 outline drawing

2SC2000
2SC2000

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Data Sheet

Negotiable 
2SC2001
2SC2001

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Negotiable 
2SC2002
2SC2002

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Negotiable 
2SC2003
2SC2003

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Negotiable 
2SC2020
2SC2020

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2SC2021
2SC2021

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Data Sheet

Negotiable