(China (Mainland))
Product Summary
The STGW19NC60HD IGBT utilizes the advanced Power MESH process resulting in an excellent trade-off between switching performance and low on-state behavior. The applications of the STGW19NC60HD include High frequency motor controls, SMPS and PFC in both hard switch and resonant topologies, Motor drives.
Parametrics
STGW19NC60HD absolute maximum ratings: (1)Collector-emitter voltage (VGE = 0): 600 V; (2)Collector current (continuous) at TC = 25 ℃: 40 to 42 A; (3)Collector current (continuous) at TC = 100 ℃: 19 to 21 A; (4)Turn-off latching current: 40 A; (5)Pulsed collector current: 40 A; (6)Diode RMS forward current at TC = 25 ℃: 20 A; (7)Surge not repetitive forward current tp=10 ms sinusoidal: 50 A; (8)Gate-emitter voltage: ±20 V; (9)Total dissipation at TC = 25 ℃: 130 to 140 W; (10)Operating junction temperature: -55 to 150 ℃.
Features
STGW19NC60HD features: (1)Low on-voltage drop (VCE(sat)); (2)Low CRES / CIES ratio (no cross-conduction susceptibility); (3)Very soft ultra fast recovery anti-parallel diode.
Diagrams
| Image | Part No | Mfg | Description |  |
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 STGW19NC60HD |
STMicroelectronics |
IGBT Transistors 19 A - 600 V Very fast IGBT |
Data Sheet |
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| Image | Part No | Mfg | Description | |
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STGW12NB60H |
STMicroelectronics |
IGBT Transistors N-Ch 600 Volt 12 Amp |
Data Sheet |
Negotiable |
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STGW12NB60HD |
Other |
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Data Sheet |
Negotiable |
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STGW19NC60H |
STMicroelectronics |
IGBT Transistors 19 A 600V FAST IGBT |
Data Sheet |
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STGW19NC60HD |
STMicroelectronics |
IGBT Transistors 19 A - 600 V Very fast IGBT |
Data Sheet |
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STGW19NC60W |
STMicroelectronics |
IGBT Transistors 19A 600V ULT FS IGBT |
Data Sheet |
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STGW19NC60WD |
STMicroelectronics |
IGBT Transistors N Ch 600V 19A |
Data Sheet |
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