LM308N

DIP, operational amplifier, ±18V, 500 mW, 300 μA, drift characteristics, low current error

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Price:: US $1.00~10.00 / piece [Get Latest Price]

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PartNumber:: LM308N

Brand:: National Semiconductor - NS | Pack: DIP | D/C: 10+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2011-11-21

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Product Summary

The LM308N is precision operational amplifier having specifications a factor of ten better than FET amplifier over a -55℃ to +125℃ temperature range. The LM308N devices operate with supply voltages from ±2V to ±20V and have sufficient supply rejection to use unregulated supplies. Although the circuit is interchangeable with and uses the same compensation as the LM101A, an alternate compensation scheme can be used to make it particularly insensitive to power supply noise and to make supply bypass capacitors unnecessary. The low current error of the LM308N makes possible many designs that are not practical with conventional amplifiers.

Parametrics

LM308N absolute maximum ratings: (1)Supply Voltage: ±18V; (2)Power Dissipation (Note 1): 500 mW; (3)Differential Input Current (Note 2): ±10 mA; (4)Input Voltage (Note 3): ±15V; (5)Operating Temperature Range: 0 to +70℃; (6)Storage Temperature Range: -65 to +150℃; (7)Lead Temperature (Soldering, 10 sec): DIP, 260℃; H Package Lead Temp (Soldering 10 seconds), 300℃.

Features

LM308N features: (1)Maximum input bias current of 3.0 nA over temperature; (2)Offset current less than 400 pA over temperature; (3)Supply current of only 300 μA, even in saturation; (4)Guaranteed drift characteristics.