Product Summary

The 2N2647 is the silicon planar unijunction transistor which has a structure resulting in lower saturation voltage, peak-point current and valley current as well as a much higher base-one peak pulse voltage. In addition, the device is much faster switch. The 2N2647 is intended for applications where a low emitter leakage current and a low peak point emitter current (trigger current) are required and also for triggering high power SCR.

Parametrics

2N2647 absolute maximum ratings: (1)Base 1 – Emitter Voltage: 30 V; (2)Base 2 – Emitter Voltage: 30 V; (3)RMS Emitter Current: 50 mA; (4)Emitter Peak Current: 2 A; (5)Total Power Dissipation: 300 mW; (6)Maximum Junction: 150℃; (7)Storage Temperature Range: -55 to +175℃.

Features

2N2647 features: (1)Low peak point current: 2μA(max); (2)Low emitter reverse current: 200nA(max); (3)Passivated surface for reliability and uniformity.

Diagrams

2N2647 circuit diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
2N2647
2N2647

Central Semiconductor

Transistors Bipolar (BJT) PNP Unijunction

Data Sheet

0-500: $2.89
500-1000: $2.75
1000-2000: $2.68
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(USD)
Quantity
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2N2609

Central Semiconductor

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Data Sheet

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2N2646
2N2646

Central Semiconductor

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Data Sheet

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2N2647
2N2647

Central Semiconductor

Transistors Bipolar (BJT) PNP Unijunction

Data Sheet

0-500: $2.89
500-1000: $2.75
1000-2000: $2.68
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2N2696

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Data Sheet

Negotiable